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ESN4838 - N-channel MOSFET

Description

The ESN4838 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • 30V, RDS(ON)=7.5mΩ(Typ. ) @VGS=10V RDS(ON)=12.0mΩ(Typ. ) @VGS=4.5V.
  • Use trench MOSFET technology.
  • High density cell design for low RDS(on).
  • Material: Halogen free.
  • Reliable and rugged.
  • Avalanche Rated.
  • Low leakage current 3.

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Datasheet Details

Part number ESN4838
Manufacturer ElecSuper
File Size 590.44 KB
Description N-channel MOSFET
Datasheet download datasheet ESN4838 Datasheet
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    ESN4838 Rev-1.4 www.elecsuper.com SuperMOS –PDFN3*3-8L 30V BVDSS, 7.5mΩ RDS(on), N-channel MOSFET 1. Description The ESN4838 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ESN4838 is Pb-free. 2. Features ⚫ 30V, RDS(ON)=7.5mΩ(Typ.) @VGS=10V RDS(ON)=12.0mΩ(Typ.) @VGS=4.5V ⚫ Use trench MOSFET technology ⚫ High density cell design for low RDS(on) ⚫ Material: Halogen free ⚫ Reliable and rugged ⚫ Avalanche Rated ⚫ Low leakage current 3. Applications ⚫ PWM applications ⚫ Load switch ⚫ Power management in portable/desktop PCs ⚫ DC/DC conversion 100% UIS TESTED 4.
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