ESN4838 Overview
Description
The ESN4838 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- 30V, RDS(ON)=7.5mΩ(Typ.) @VGS=10V RDS(ON)=12.0mΩ(Typ.) @VGS=4.5V
- Use trench MOSFET technology
- High density cell design for low RDS(on)
- Material: Halogen free
- Reliable and rugged
- Avalanche Rated
- Low leakage current
