M13S128168A Datasheet (2M x 16 Bit x 4 Banks Double Data Rate SDRAM)

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Manufacturer	Part Number	Description
Elite Semiconductor Microelectronics Technology	M13S128168A-4.5BG2S	2M x 16 Bit x 4 Banks Double Data Rate SDRAM
Elite Semiconductor Microelectronics Technology	M13S128168A-4.5TG2S	2M x 16 Bit x 4 Banks Double Data Rate SDRAM
Elite Semiconductor Microelectronics Technology	M13S128168A-4BG2S	2M x 16 Bit x 4 Banks Double Data Rate SDRAM
Elite Semiconductor Microelectronics Technology	M13S128168A-4TG2S	2M x 16 Bit x 4 Banks Double Data Rate SDRAM
Elite Semiconductor Microelectronics Technology	M13S128168A-5BG2S	2M x 16 Bit x 4 Banks Double Data Rate SDRAM

Pin Name Function Pin Name Function A0~A1.

Double-data-rate architecture, two data transfers per clock cycle
Bi-directional data strobe (DQS)
Differential clock inputs (CLK and CLK )
DLL aligns DQ and DQS transition with CLK transition
Four bank operation
CAS Latency : 2, 2.5, 3
Burst Type : Sequential and Interleave
Burst Length : 2, 4, 8
All inputs except data & DM are sampled at the rising edge of the system clock (CLK)
Data I/O transitions on both edges of data strobe (DQS)