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M13S128168A - Double Data Rate SDRAM

Description

DM is an input mask signal for write data.

Features

  • Double-data-rate architecture, two data transfers per clock cycle.
  • Bi-directional data strobe (DQS).
  • Differential clock inputs (CLK and CLK ).
  • DLL aligns DQ and DQS transition with CLK transition.
  • Four bank operation.
  • CAS Latency : 2, 2.5, 3.
  • Burst Type : Sequential and Interleave.
  • Burst Length : 2, 4, 8.
  • All inputs except data & DM are sampled at the rising edge of the system clock (CLK).
  • Data I/O transitions on both edges of data strobe (DQS).

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Datasheet Details

Part number M13S128168A
Manufacturer Elite Semiconductor Memory Technology
File Size 1.76 MB
Description Double Data Rate SDRAM
Datasheet download datasheet M13S128168A Datasheet

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Full PDF Text Transcription

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ESMT M13S128168A (2S) DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK )  DLL aligns DQ and DQS transition with CLK transition  Four bank operation  CAS Latency : 2, 2.5, 3  Burst Type : Sequential and Interleave  Burst Length : 2, 4, 8  All inputs except data & DM are sampled at the rising edge of the system clock (CLK)  Data I/O transitions on both edges of data strobe (DQS)  DQS is edge-aligned with data for READs; center-aligned with data for WRITEs  Data mask (DM) for write masking only  VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V  15.6us refresh interval  Auto & Self refresh  2.
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