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F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

General Description

The device is a 128Mx8bit with spare 4Mx8bit capacity (or 64Mx16bit with spare 2Mx16bit capacity).

The device is offered in 1.8V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V).
  • Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit.
  • Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
  • Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (.

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📁 Similar Datasheet

Part Number Description Manufacturer
F59D1G81LB-45BCG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory ESMT
F59D1G81LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory ESMT
F59D1G81LB-45TG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory ESMT
F59D1G81MA-45BCG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory ESMT
F59D1G81MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory ESMT

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D2G161A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
F59D2G81A 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
F59D4G161A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
F59D4G81A 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word  Page Read Operation - Page Size: (2K + 64) Byte (x8) Page Size: (1K + 32) Word (x16) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 250us (Typ.) - Block Erase time: 2ms (Typ.)  Command/Address/Data Multiplexed I/O Port F59D1G81A / F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.