F59D1G81MB - 1.8V NAND Flash Memory

This page provides the datasheet information for the F59D1G81MB, a member of the F59D1G81MB-45TG2M 1.8V NAND Flash Memory family.

Product Overview

ESMT

Part number	F59D1G81MB
Manufacturer	ESMT
File Size	2.37 MB
Description	1.8V NAND Flash Memory
Datasheet	F59D1G81MB Datasheet
Additional preview pages of the F59D1G81MB datasheet.

The Device is a 128Mx8bit with spare 4Mx8bit capacity.

The device is offered in 1.8V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Voltage Supply: 1.8V (1.7 V ~ 1.95V).
Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit.
Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max. ) - Serial Access: 45ns (.

F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D4G161A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D4G81A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L2G81A - 2 Gbit (256M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)

Other Datasheets by ESMT

Published: Oct 22, 2024 |