Datasheet4U.com

2SC3875 Datasheet PDF

Elite 2SC3875

NPN Epitaxial Silicon Transistor

Part No. 2SC3875
Datasheet 2SC3875 Download
Manufacturer
Elite
Description NPN Epitaxial Silicon Transistor
Buy Stock & Price
2SC3875 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 60 50 5 150 150 150 -55~+150 V V V mA mW oC oC Tolerance : 0.1mm Dimensions (Unit : mm) 1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS

(TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT IC= 100µA, IE= 0 IC= 1mA, IB= 0 IE= 100µA, IC= 0 VCB= 60V, IE= 0 VCE= 45V, IB= 0 VEB= 5V, IC= 0 VCE= 6V, IC= 2mA IC= 100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 10V, IC= 1mA f= 100MHz Min Max Unit 60 V 50 V 5V 0.1 µA 0.