The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
ST 2SC3875
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25? )
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
G S P FORM A IS AVAILABLE
Value 60 50 5 150 30 150 125
-55 to +125
Unit V V V mA mA
mW OC OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.
2SC3875 Datasheet
