C3875 Datasheet | Elite

2SC3875 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR SOT-23 Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150m W Absolute Maximum Ratings (TA=25o C) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 60 50 5 150 150 150 -55~+150 V V V m A m W o C o C Tolerance : 0.1mm Dimensions (Unit : mm) 1. Emitter 2. Base 3. Collector Electrical Characteristics (TA=25o C) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO h FE VCE(sat) VBE(sat) f T IC= 100µA, IE= 0 IC= 1m A, IB= 0 IE= 100µA, IC= 0 VCB= 60V, IE= 0 VCE= 45V, IB= 0 VEB= 5V, IC= 0 VCE= 6V, IC= 2m A IC= 100m A, IB= 10m A IC= 100m A, IB= 10m A VCE= 10V, IC= 1m A f= 100MHz Min Max Unit 60 V 50 V 5V 0.1 µA 0.2 µA 0.1 µA 70 700 0.25 V 1V 80 MHz h FE CLASSIFICATION Classification G h FE 70-140 Y 120-240 GR 200-400 BL...