C3875 Datasheet and Specifications PDF

2SC3875 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR SOT-23 Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings (TA=25oC) Characteristi.

B= 60V, IE= 0 VCE= 45V, IB= 0 VEB= 5V, IC= 0 VCE= 6V, IC= 2mA IC= 100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 10V, IC= 1mA f= 100MHz Min Max Unit 60 V 50 V 5V 0.1 µA 0.2 µA 0.1 µA 70 700 0.25 V 1V 80 MHz hFE CLASSIFICATION Classification G hFE 70-140 Y 120-240 GR 200-400 BL 350-700 Device Mark.

ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On speci.

Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA at f=1KHz, RG=10KΩ Symbol hFE hFE hFE hFE VCE(sat) ICBO IEBO fT COB NF Min. 70 120 200 350 80 - - G S P FORM A IS AVAILABLE Typ. 0.1 2 1 Max. 140 240 400 700 0.25 0.1 0.1 3..

2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special .

rent at VCB=60V Emitter Cutoff Current at VEB=5V Transition Frequency VCE(sat) ICBO IEBO - 0.1 0.25 V - 0.1 μA - 0.1 μA at VCE=10V, IC=1mA Collector Output Capacitance fT 80 - - MHz at VCB=10V, f=1MHz Noise Figure COB - 2 3.5 pF at VCE=6V, IC=0.1mA f=1KHz, RG=10KΩ NF - 1 10 dB Page.