NT5DS64M8DS - 512Mb DDR SDRAM

Elixir

General Description

Elixir 512Mb SDRAMs is a high-speed CMOS Double Data Rate SDRAM containing 536,870,912 bits.

It is internally configured as a qual-bank DRAM.

The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device.

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NT5DS64M8DS 512mb ddr sdram by Elixir - Datasheet Preview

Datasheet Details

Part number	NT5DS64M8DS
Manufacturer	Elixir
File Size	2.35 MB
Description	512Mb DDR SDRAM
Datasheet	NT5DS64M8DS Datasheet

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Other Datasheets by Elixir

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NT5DS64M8DS N2DS51216DS 512Mb DDR SDRAM Preliminary Feature CAS Latency Frequency DDR-333 DDR400  2KB page size for all configurations. Units Speed Sorts -6K CL-tRCD-tRP -5T  DQS is edge-aligned with data for reads and is center-aligned with data for WRITEs 2.5-3-3 266 333 333 3-3-3 266 333 400 tCK CL=2 Speed CL=2.5 CL=3  Differential clock inputs (CK and ) Mbps  Data mask (DM) for write data  DLL aligns DQ and DQS transition with CK transitions.  Commands entered on each positive CK edge; data  Power Supply Voltage: VDD=VDDQ=2.5V±0.2V (DDR-333) VDD=VDDQ=2.6V±0.1V (DDR-400/500) and data mask referenced to both edges of DQS  Burst Lengths: 2, 4 or 8  Auto Pre-charge option for each burst access  Auto-Refresh and Self-Refresh Mode  7.8 µs max.