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NT5DS64M8DS Datasheet PDF

Elixir NT5DS64M8DS

The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device. These synchronous devices achieve high speed double-data-rate transfer rates of up to 500 (400, 333 or 266) MHz for general applications.
Part No. NT5DS64M8DS
Datasheet NT5DS64M8DS Download
Manufacturer
Elixir
Description 512Mb DDR SDRAM
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NT5DS64M8DS datasheet page 1 preview

DESCRIPTION

Elixir 512Mb SDRAMs is a high-speed CMOS Double Data Rate SDRAM containing 536,870,912 bits. It is internally configured as a qual-bank DRAM. The 512Mb DDR SDRAM uses a double-data-rate architecture to achieve high speed operation. The double data rate architecture is essentially a 2η prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 512Mb DDR SDRAM effectively consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during Reads and by the memory controller during Writes. DQS is edge-aligned with data for Reads and center-aligned with data for Writes. The 512Mb DDR SDRAM operates from a differential clock (CK and ; the crossing of CK going high and  going LOW is referred to as the positive edge of CK).
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