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NT5DS64M8DS - 512Mb DDR SDRAM

General Description

Nanya 512Mb SDRAMs is a high-speed CMOS Double Data Rate SDRAM containing 536,870,912 bits.

It is internally configured as a qual-bank DRAM.

The 512Mb chip is organized as 16Mbit x 8 I/O x 4 bank or 8Mbit x 16 I/O x 4 bank device.

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Datasheet Details

Part number NT5DS64M8DS
Manufacturer Nanya Techology
File Size 2.20 MB
Description 512Mb DDR SDRAM
Datasheet download datasheet NT5DS64M8DS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NT5DS64M8DS NT5DS32M16DS 512Mb DDR SDRAM                Feature CAS Latency Frequency DDR-333 DDR400 -5T/-5TI DDR500 z 2KB page size for all configurations. Units Speed Sorts -6K/-6KI CL-tRCD-tRP -4T z DQS is edge-aligned with data for reads and is center-aligned with data for WRITEs 2.5-3-3 266 333 333 3-3-3 266 333 400 3-4-4 333 500 tCK CL=2 Speed CL=2.5 CL=3 z Differential clock inputs (CK and CK) Mbps z Data mask (DM) for write data z DLL aligns DQ and DQS transition with CK transitions. z Commands entered on each positive CK edge; data z Power Supply Voltage: VDD=VDDQ=2.5V 0.2V (DDR-333) VDD=VDDQ=2.6V 0.