NT5DS64M4AW Overview
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4 or 8 locations.
NT5DS64M4AW Key Features
- Double data rate architecture: two data transfers per clock cycle
- Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
- DQS is edge-aligned with data for reads and is centeraligned with data for writes
- Differential clock inputs (CK and CK)
- Four internal banks for concurrent operation
- Data mask (DM) for write data
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Burst lengths: 2, 4, or 8
- CAS Latency: 2, 2.5
