NT5DS64M8AF - (NT5DSxxMxAF) 512Mb DDR SDRAM

This page provides the datasheet information for the NT5DS64M8AF, a member of the NT5DS128M4AF (NT5DSxxMxAF) 512Mb DDR SDRAM family.

Product Overview

Nanya Techology

Part number	NT5DS64M8AF
Manufacturer	Nanya Techology
File Size	3.03 MB
Description	(NT5DSxxMxAF) 512Mb DDR SDRAM
Datasheet	NT5DS64M8AF Datasheet
Additional preview pages of the NT5DS64M8AF datasheet.

The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.

It is internally configured as a quad-bank DRAM.

The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4, or 8 locations.

CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR333 DDR266B 6K 75B 133 100 166 133.
Double data rate architecture: two data transfers per clock cycle.
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
DQS is edge-aligned with data.

NT5DS64M8DS - 512Mb DDR SDRAM (Elixir)
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NT5DS64M4AW - (NT5DSxxMxAx) 256Mb DDR333/300 SDRAM (Nanya)
NT5DS16M16ES - Commercial and Industrial Consumer DDR 256Mb SDRAM (Nanya)
NT5DS16M8AW - (NT5DSxxMxAx) 128Mb DDR333/300 SDRAM (Nanya Technology)
NT5DS32M4AW - (NT5DSxxMxAx) 128Mb DDR333/300 SDRAM (Nanya Technology)
NT5DS32M8AT - 256Mb DDR333/300 SDRAM (Nanya)
NT5DS32M8AW - (NT5DSxxMxAx) 256Mb DDR333/300 SDRAM (Nanya)
NT5DS32M8ES - Commercial and Industrial Consumer DDR 256Mb SDRAM (Nanya)
NT5DS4M32EG - 1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM (NanoAmp Solutions)

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Published: Sep 24, 2006 |