EBE21FE8ACFR - 2GB Fully Buffered DIMM

Features

JEDEC standard Raw Card B Design.
Industry Standard Advanced Memory Buffer (AMB).
High-speed differential point-to-point link interface at 1.5V (JEDEC spec)  14 north-bound (NB) high speed serial lanes  10 south-bound (SB) high speed serial lanes.
Various features/modes:  MemBIST and IBIST test functions  Transparent mode and direct access mode for DRAM testing  Interface for a thermal sensor and status indicator.
Channel error detection and rep.

Elpida Memory

Datasheet Details

Part number	EBE21FE8ACFR
Manufacturer	Elpida Memory
File Size	231.24 KB
Description	2GB Fully Buffered DIMM
Datasheet	EBE21FE8ACFR Datasheet
Additional preview pages of the EBE21FE8ACFR datasheet.

📁 Similar Datasheet

Other Datasheets by Elpida Memory

EBE21FE8ACFT - 2GB Fully Buffered DIMM
EBE21FE8ACWR - 2GB Fully Buffered DIMM
EBE21FE8ACWT - 2GB Fully Buffered DIMM
EBE21FD4AGFD - 2GB Fully Buffered DIMM
EBE21FD4AGFN - 2GB Fully Buffered DIMM
EBE21FD4AHFE - 2GB Fully Buffered DIMM
EBE21FD4AHFL - 2GB Fully Buffered DIMM
EBE21FD4AHFT - 2GB Fully Buffered DIMM

Full PDF Text Transcription

Click to expand full text

DATA SHEET www.DataSheet4U.com 2GB Fully Buffered DIMM EBE21FE8ACFR Specifications • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/ −0.045V • Data rate: 667Mbps (max.

Published: Mar 21, 2010 |