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EBE21FE8ACWT - 2GB Fully Buffered DIMM

Key Features

  • JEDEC standard Raw Card B Design.
  • Industry Standard Advanced Memory Buffer (AMB).
  • High-speed differential point-to-point link interface at 1.5V (JEDEC spec)  14 north-bound (NB) high speed serial lanes  10 south-bound (SB) high speed serial lanes.
  • Various features/modes:  MemBIST and IBIST test functions  Transparent mode and direct access mode for DRAM testing  Interface for a thermal sensor and status indicator.
  • Channel error detection and rep.

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Datasheet Details

Part number EBE21FE8ACWT
Manufacturer Elpida Memory
File Size 231.17 KB
Description 2GB Fully Buffered DIMM
Datasheet download datasheet EBE21FE8ACWT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.DataSheet4U.com 2GB Fully Buffered DIMM EBE21FE8ACWT Specifications • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package  240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitch: 1.00mm  Advanced Memory Buffer (AMB): 655-ball FCBGA  Lead-free (RoHS compliant) • Power supply  DDR2 SDRAM: VDD = 1.8V ± 0.1V  AMB: VCC = 1.5V + 0.075V/ −0.045V • Data rate: 667Mbps (max.