EBE25UC8AAFV - 256MB Unbuffered DDR2 SDRAM HYPER DIMM

Description

The EBE25UC8AAFV is 32M words × 64 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 256M bits DDR2 SDRAM sealed in FBGA package.

Read and write operations are performed at the cross points of the CK and the /CK.

Features

240-pin socket type dual in line memory module (DIMM)  PCB height: 30.0mm  Lead pitch: 1.0mm  Lead-free.
1.8V power supply.
Data rate: 700Mbps/667Mbps/600Mbps (max. ).
1.8V (SSTL_18 compatible) I/O.
Double-data-rate architecture: two data transfers per clock cycle.
Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
DQS is edge aligned with data f.

Elpida Memory

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Datasheet Details

Part number	EBE25UC8AAFV
Manufacturer	Elpida Memory
File Size	263.93 KB
Description	256MB Unbuffered DDR2 SDRAM HYPER DIMM
Datasheet	EBE25UC8AAFV Datasheet
Additional preview pages of the EBE25UC8AAFV datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET www.DataSheet4U.com 256MB Unbuffered DDR2 SDRAM HYPER DIMM EBE25UC8AAFV (32M words × 64 bits, 1 Rank) Description The EBE25UC8AAFV is 32M words × 64 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 256M bits DDR2 SDRAM sealed in FBGA package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 4 bits prefetch-pipelined architecture. Data strobe (DQS and /DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. This module provides high density mounting without utilizing surface mount technology.

Published: Mar 21, 2010 |