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PRELIMINARY DATA SHEET
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4GB Unbuffered DDR2 SDRAM DIMM
EBE41EF8ABFA (512M words × 72 bits, 2 Ranks)
Specifications
• Density: 4GB • Organization 512M words × 72 bits, 2 ranks • Mounting 18 pieces of 2G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory module (DIMM) PCB height: 30.0mm Lead pitch: 1.0mm Lead-free (RoHS compliant) • Power supply: VDD = 1.8V ± 0.1V • Data rate: 800Mbps/667Mbps (max.) • Eight internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5, 6 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.