EDD2504AKTA-E Datasheet | Elpida Memory

( Data Sheet : .. ) DATA SHEET 256M bits DDR SDRAM EDD2504AKTA-E (64M words × 4 bits) Description The EDD2504AKTA is a 256M bits Double Data Rate (DDR) SDRAM organized as 16,777,216 words × 4 bits × 4 banks. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 2 bits prefetchpipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. It is packaged in 66-pin plastic TSOP (II). Pin Configurations /xxx indicates active low signal. 66-pin Plastic TSOP(II) VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ NC NC VDDQ NC NC VDD NC NC /WE /CAS /RAS /CS NC BA0 BA1 A10(AP) A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 (Top view) Features - Power supply : VDDQ = 2.5V ± 0.2V : VDD = 2.5V ± 0.2V - Data rate: 333Mbps/266Mbps (max.) - Double Data Rate architecture; two data transfers per clock cycle - Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver - Data inputs, outputs, and DM are synchronized with DQS - 4 internal banks for concurrent operation - DQS is edge aligned with data for READs; center aligned with data for WRITEs - Differential clock inputs (CK and /CK) - DLL aligns DQ and DQS transitions with CK transitions - mands entered on each positive CK edge; data and data mask referenced to both edges of DQS - Data mask (DM) for write data - Auto precharge option for each burst access - SSTL_2 patible I/O - Programmable burst length (BL): 2, 4, 8 - Programmable /CAS latency (CL): 2, 2.5 - Programmable output driver strength: normal/weak - Refresh cycles: 8192 refresh cycles/64ms  7.8µs maximum average periodic refresh interval - 2 variations of refresh  Auto refresh  Self...