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EDE5104AGSE Datasheet (EDE510xAGSE) 512M bits DDR2 SDRAM

Manufacturer: Elpida Memory

Download the EDE5104AGSE datasheet PDF. This datasheet also includes the EDE5108AGSE variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EDE5108AGSE_ElpidaMemory.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EDE5104AGSE
Manufacturer Elpida Memory
File Size 684.25 KB
Description (EDE510xAGSE) 512M bits DDR2 SDRAM
Download EDE5104AGSE Download (PDF)

General Description

The EDE5104AGSE is a 512M bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 4 banks.

The EDE5108AGSE is a 512M bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 4 banks.

They are packaged in 60-ball FBGA (µBGA) package.

Overview

PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AGSE (128M words × 4 bits) EDE5108AGSE (64M words × 8.

Key Features

  • Power supply: VDD, VDDQ = 1.8V ± 0.1V.
  • Double-data-rate architecture: two data transfers per clock cycle.
  • Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver.
  • DQS is edge aligned with data for READs: centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transitions.
  • Commands entered on e.