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EDJ1116DBSE - 64M words x 16 bits 1G bits DDR3 SDRAM

This page provides the datasheet information for the EDJ1116DBSE, a member of the EDJ1108DBSE 64M words x 16 bits 1G bits DDR3 SDRAM family.

Datasheet Summary

Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • The high-speed data transfer is realized by the 8 bits prefetch pipelined architecture.
  • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver.
  • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs.
  • Differential clock inputs (CK and /CK).
  • DLL aligns DQ and DQS transitions with CK transi.

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Datasheet preview – EDJ1116DBSE

Datasheet Details

Part number EDJ1116DBSE
Manufacturer Elpida Memory
File Size 2.19 MB
Description 64M words x 16 bits 1G bits DDR3 SDRAM
Datasheet download datasheet EDJ1116DBSE Datasheet
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Full PDF Text Transcription

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DATA SHEET 1G bits DDR3 SDRAM EDJ1108DBSE (128M words × 8 bits) EDJ1116DBSE (64M words × 16 bits) Specifications • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDJ1108DBSE)  8M words × 16 bits × 8 banks (EDJ1116DBSE) • Package  78-ball FBGA (EDJ1108DBSE)  96-ball FBGA (EDJ1116DBSE)  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.5V ± 0.075V • Data rate  1600Mbps/1333Mbps (max.
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