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HB56UW1673E-F - 128MB Buffered EDO DRAM DIMM 16-Mword X 72-bit

Description

The HB 56UW 1673E belongs to 8-byte DI MM (D ual in-line Memory Module) fa mily , and have bee n developed an optimized main memory solution for 4 and 8-byte processor applications.

Features

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  • 168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm.
  • Single 3.3 V supply : 3.3 ± 0.3 V.
  • High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max).
  • Low power dissipation  Active mode: 8.46 W/7.16 W (max)  Standby mode (TTL): 166 mW (max).
  • Buffered input except RAS and DQ.
  • 4 byte interleave enabled, dual address input (A0/B0) Elpida Memory, Inc. is a joint venture DRAM com.

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Datasheet Details

Part number HB56UW1673E-F
Manufacturer Elpida Memory
File Size 256.30 KB
Description 128MB Buffered EDO DRAM DIMM 16-Mword X 72-bit
Datasheet download datasheet HB56UW1673E-F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HB56UW1673E-F Description The HB 56UW 1673E belongs to 8-byte DI MM (D ual in-line Memory Module) fa mily , and have bee n developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56UW1673E is a 16 M × 72 Dyna mic R AM Module, mounted 18 piec es of 64-Mbit DR AM (H M5165405) sea led in TS OP pac kage and 2 piec es of 16-bit line drive r sea led in TS SOP pac kage . The HB 56UW 1673E off ers Extende d Da ta Out (ED O) P age Mode as a high spee d ac ce ss mode. An outline of the HB 56UW 1673E is 168-pin socke t type pac kage (dua l lea d out). The ref ore, the HB 56UW 1673E make s high density mounting possible without surface mount technology. The HB56UW1673E provides common data inputs and outputs.
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