HB56UW1673E-F 128MB Buffered EDO DRAM DIMM 16-Mword X 72-bit Datasheet

HB56UW1673E-F Key Features

168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm
Single 3.3 V supply : 3.3 ± 0.3 V
High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max)
Low power dissipation  Active mode: 8.46 W/7.16 W (max)  Standby mode (TTL): 166 mW (max)
Buffered input except RAS and DQ
4 byte interleave enabled, dual address input (A0/B0)
JEDEC standard outline buffered 8-byte DIMM EDO page mode capability 4096 refresh cycles: 64 ms 2 variations of refresh

Part Number	Description
HB56UW3272ETK-F	256MB Buffered EDO DRAM DIMM 32-Mword X 72-bit
HB56UW873E-F	64MB Buffered EDO DRAM DIMM 8-Mword X 72-bit
HB52E649E12-A6B	512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 100 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
HB52E649E12-B6B	512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 100 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
HB52F649E1-75B	512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 133 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC133SDRAM