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MC-4R128FKE8D - Direct Rambus DRAM RIMM Module

General Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

Key Features

  • 184 edge connector pads with 1mm pad spacing.
  • 128 MB Direct RDRAM storage.
  • Each RDRAM has 32 banks, for 128 banks total on module.
  • Gold plated contacts.
  • RDRAMs use Chip Scale Package (CSP).
  • Serial Presence Detect support.
  • Operates from a 2.5 V supply.
  • Powerdown self refresh modes.
  • Separate Row and Column buses for higher efficiency.
  • Over Drive Factor (ODF) support The information in this document is subj.

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Datasheet Details

Part number MC-4R128FKE8D
Manufacturer Elpida Memory
File Size 113.89 KB
Description Direct Rambus DRAM RIMM Module
Datasheet download datasheet MC-4R128FKE8D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8D Direct Rambus DRAM RIMMTM Module 128M-BYTE (64M-WORD x 18-BIT) Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R128FKE8D modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.