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MC-4R128FKE8S - Direct Rambus DRAM SO-RIMM Module

General Description

The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking systems, and other applications where high bandwidth and low latency are required.

Key Features

  • 160 edge connector pads with 0.65mm pad spacing.
  • 128 MB Direct RDRAM storage.
  • Each RDRAM has 32 banks, for 128 banks total on module.
  • Gold plated contacts.
  • RDRAMs use Chip Scale Package (CSP).
  • Serial Presence Detect support.
  • Operates from a 2.5 V supply.
  • Powerdown self refresh modes.
  • Separate Row and Column buses for higher efficiency The information in this document is subject to change without notice. Before us.

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Datasheet Details

Part number MC-4R128FKE8S
Manufacturer Elpida Memory
File Size 123.65 KB
Description Direct Rambus DRAM SO-RIMM Module
Datasheet download datasheet MC-4R128FKE8S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S Direct Rambus DRAM SO-RIMMTM Module 128M-BYTE (64M-WORD x 18-BIT) Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking systems, and other applications where high bandwidth and low latency are required. MC-4R128FKE8S modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies.