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EM620FU8B Datasheet 256k X8 Bit Low Power And Low Voltage Full CMOS Static Ram

Manufacturer: Emerging Memory - Logic Solutions

Overview: EM620FU8B Document Title 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM Low Power, 256Kx8 SRAM .. Revision History Revision No. 0.0 0.1 History Initial Draft 0.1 Revision Fix typo error Draft Date Oct. 31, 2007 Nov. 16, 2007 Remark 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : .emlsi. Emerging Memory & Logic Solutions Inc. Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.

Datasheet Details

Part number EM620FU8B
Manufacturer Emerging Memory - Logic Solutions
File Size 421.11 KB
Description 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Datasheet EM620FU8B_EmergingMemory&LogicSolutions.pdf

General Description

S Name CS1,CS2 OE WE A0~A17 I/O0~I/O7 Function Chip select inputs Output Enable input Write Enable input Address Inputs Data Inputs/Outputs Name Vcc Vss NC Function Power Supply x Pre-charge Circuit Row Select Ground No Connection A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 VCC VSS Memory Array 1024 x 2048 I/O0 ~ I/O7 Data Cont I/O Circuit Column Select A10 A11 A12 A13 A14 A15 A16 A17 WE OE CS1 CS2 Control Logic BONDING INSTRUCTIONS The 2M full CMOS SRAM die has total 56pads.

Refer to the bond pad location and identification table for X, Y co

Key Features

  • - Process Technology : 0.15µm Full CMOS - Organization :256K x8 - Power Supply Voltage => EM620FU8B : 2.7~3.3V - Low Data Retention Voltage : 1.5V - Three state output and TTL Compatible - Packaged product designed for 45/55/70ns.

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