EM620FV8B Overview
EM620FV8B Series Low Power, 256Kx8 SRAM Document Title 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. 16, 2007 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1749~1750 / Homepage.
EM620FV8B Key Features
- Process Technology : 0.15µm Full CMOS
- Organization :256K x8
- Power Supply Voltage => EM620FV8B : 2.7~3.6V
- Low Data Retention Voltage : 1.5V
- Three state output and TTL patible
- Packaged product designed for 45/55/70ns GENERAL PHYSICAL SPECIFICATIONS
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um +/-15um
- Typical top-level metallization : => Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms
- Topside Passivation : => Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms