EN29LV400
EN29LV400 is 4M Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the EN29LV400B comparator family.
- Part of the EN29LV400B comparator family.
FEATURES
- 3V, single power supply operation
- Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read and write operations and for patibility with high performance 3.3 volt microprocessors.
- High performance
- Access times as fast as 45 ns
- Low power consumption (typical values at 5 MHz)
- 7 m A typical active read current
- 15 m A typical program/erase current
- 1 µA typical standby current (standard access time to active mode)
- Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword and seven 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
- High performance program/erase speed
- Byte/Word program time: 8µs typical
- Sector erase time: 500ms typical
- JEDEC Standard program and erase mands
- JEDEC standard DATA polling and toggle bits feature
- Single Sector and Chip Erase
- Sector Unprotect Mode
- Embedded Erase and Program Algorithms
- Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode
- triple-metal double-poly triple-well CMOS Flash Technology
- Low Vcc write inhibit < 2.5V
- Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
- mercial and Industrial Temperature Range
- >100K program/erase endurance cycle da0.
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GENERAL DESCRIPTION
The EN29LV400 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The EN29LV400 features
3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor...
