Datasheet4U Logo Datasheet4U.com

EN29LV400B - 4M Flash Memory

General Description

The EN29LV400 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words.

Any byte can be programmed typically in 8µs.

Key Features

  • 3V, single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
EN29LV400A 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory EON
EN29LV160C 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory EON
EN29LV160D 16 Megabit Flash Memory Boot Sector Flash Memory ESMT
EN29LV160DB 16 Megabit Flash Memory Boot Sector Flash Memory ESMT
EN29LV160DT 16 Megabit Flash Memory Boot Sector Flash Memory ESMT

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
EN29LV400 4M Flash Memory
EN29LV010 CMOS 3.0 Volt-only Flash Memory
EN29LV040A CMOS 3.0 Volt-only Flash Memory
EN29LV160 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV160A 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com EN29LV400 EN29LV400 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3V, single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.