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EN29LV640T - 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory

General Description

The EN29LV640T/B is a 64-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 8,388,608 bytes or 4,194,304 words.

Any word can be programmed typically in 8µs.

Key Features

  • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations.
  • High performance - Access times as fast as 70 ns.
  • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 μA current in standby or automatic sleep mode.
  • Standard DATA# polling and toggle bits feature.
  • Unlock Bypass Program command supported.
  • Erase Suspend / Resume mod.

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📁 Similar Datasheet

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
EN29LV640 Uniform Sector Flash Memory
EN29LV010 CMOS 3.0 Volt-only Flash Memory
EN29LV040A CMOS 3.0 Volt-only Flash Memory
EN29LV160 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory
EN29LV160A 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EN29LV640T/B EN29LV640T/B 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 70 ns • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 μA current in standby or automatic sleep mode. • Standard DATA# polling and toggle bits feature • Unlock Bypass Program command supported • Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode • Support JEDEC Common Flash Interface (CFI). • Low Vcc write inhibit < 2.5V • Minimum 100K program/erase endurance cycles.