EN71SN10F - 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip

Features

Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit.
Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm.
Operating Voltage - NAND : 1.7V to 1.95V - Mobile DDR SDRAM : 1.7V to 1.95V.
Operating Temperature :-25 °C to +85 °C NAND FLASH.
Voltage Supply: 1.8V (1.7V ~ 1.95V ).
Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Multiplexed address/ data - Data Register : (2K + 64) x 8.

Eon Silicon Solution

Datasheet Details

Part number	EN71SN10F
Manufacturer	Eon Silicon Solution
File Size	4.04 MB
Description	1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip
Datasheet	EN71SN10F Datasheet
Additional preview pages of the EN71SN10F datasheet.

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Full PDF Text Transcription

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EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage - NAND : 1.7V to 1.95V - Mobile DDR SDRAM : 1.7V to 1.95V • Operating Temperature :-25 °C to +85 °C NAND FLASH • Voltage Supply: 1.8V (1.7V ~ 1.95V ) • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Multiplexed address/ data - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.) - Serial Access : 45ns (Min.

Published: Mar 5, 2019 |