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EN71SN10F - 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip

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Eon Silicon Solution

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EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip by Eon Silicon Solution - Datasheet Preview — Datasheet preview – EN71SN10F

Datasheet Details

Part number	EN71SN10F
Manufacturer	Eon Silicon Solution
File Size	4.04 MB
Description	1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip
Datasheet	EN71SN10F Datasheet
Additional preview pages of the EN71SN10F datasheet.

Product details

Features

Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit.
Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm.
Operating Voltage - NAND : 1.7V to 1.95V - Mobile DDR SDRAM : 1.7V to 1.95V.
Operating Temperature :-25 °C to +85 °C NAND FLASH.
Voltage Supply: 1.8V (1.7V ~ 1.95V ).
Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Multiplexed address/ data - Data Register : (2K + 64) x 8.

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Published: Mar 5, 2019 |