EN25B10
Overview
The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
- Single power supply operation - Full voltage range: 2.7-3.6 volt
- 1 M-bit Serial Flash - 1 M-bit/128 K-byte/512 pages - 256 bytes per programmable page
- High performance - 75MHz clock rate
- Low power consumption - 5 mA typical active current - 1 μA typical power down current
- Flexible Sector Architecture: - Two 4-Kbyte, one 8-Kbyte, one 16Kbyte,three 32-Kbyte sectors
- Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin
- High performance program/erase speed Byte program time: 7µs typical Page program time: 1.5ms typical Sector erase time: 300 to 500ms typical Chip erase time: 2 Seconds typical
- Minimum 100K endurance cycle
- Package Options - 8 pins SOP 150mil body width - 8 contact VDFN
- Commercial and industrial temperature Range
