Datasheet Summary
Revision History
Revision 0.1 (Oct. 2013) -First release.
Oct. 2013
1/38
.eorex.
4Gb (32M×8Bank×16) Double DATA RATE 3 SDRAM
Features
- JEDEC Standard VDD/VDDQ = 1.35V-0.065/+0.1V
- Backward patible to VDD/ VDDQ = 1.5V ±0.075V..
- All inputs and outputs are patible with SSTL_15 interface.
- Fully differential clock inputs (CK, /CK) operation.
- Eight Banks
- Posted CAS by programmable additive latency
- Bust length: 4 with Burst Chop (BC) and 8.
- CAS Write Latency (CWL): 5,6,7,8
- CAS Latency (CL): 6,7,8,9,10,11
- Write Latency (WL) =Read Latency (RL) -1.
- Bi-directional Differential Data Strobe (DQS).
- Data inputs on DQS centers when write.
-...