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EM47EM1688MBB - 4Gb Double DATA RATE-3 SDRAM

Features

  • JEDEC Standard VDD/VDDQ = 1.35V-0.065/+0.1V.
  • Backward compatible to VDD/ VDDQ = 1.5V ±0.075V.
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks.
  • Posted CAS by programmable additive latency.
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 5,6,7,8.
  • CAS Latency (CL): 6,7,8,9,10,11.
  • Write Latency (WL) =Read La.

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Datasheet Details

Part number EM47EM1688MBB
Manufacturer Eorex
File Size 1.76 MB
Description 4Gb Double DATA RATE-3 SDRAM
Datasheet download datasheet EM47EM1688MBB Datasheet

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Full PDF Text Transcription

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Revision History Revision 0.1 (Oct. 2013) -First release. EM47EM1688MBB Oct. 2013 1/38 www.eorex.com EM47EM1688MBB 4Gb (32M×8Bank×16) Double DATA RATE 3 SDRAM Features • JEDEC Standard VDD/VDDQ = 1.35V-0.065/+0.1V • Backward compatible to VDD/ VDDQ = 1.5V ±0.075V.. • All inputs and outputs are compatible with SSTL_15 interface. • Fully differential clock inputs (CK, /CK) operation. • Eight Banks • Posted CAS by programmable additive latency • Bust length: 4 with Burst Chop (BC) and 8. • CAS Write Latency (CWL): 5,6,7,8 • CAS Latency (CL): 6,7,8,9,10,11 • Write Latency (WL) =Read Latency (RL) -1. • Bi-directional Differential Data Strobe (DQS). • Data inputs on DQS centers when write. • Data outputs on DQS, /DQS edges when read.
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