Datasheet4U Logo Datasheet4U.com

EM488M1644LBA - 128Mb Synchronous DRAM

Description

The EM488M1644LBA is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Meg words x 4 banks by 16 bits.

Features

  • Fully Synchronous to Positive Clock Edge.
  • VDD/VDDQ= 1.8V +/- 0.1V Power Supply.
  • LVTTL Compatible with Multiplexed Address.
  • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page.
  • Programmable CAS Latency (C/L).
  • 1,2,3.
  • Data Mask (DQM) for Read / Write Masking.
  • Programmable Wrap Sequence.
  • Sequential (B/L = 1/2/4/8/full Page).
  • Interleave (B/L = 1/2/4/8).
  • Burst Read with Single-bit Write Operation.

📥 Download Datasheet

Datasheet preview – EM488M1644LBA

Datasheet Details

Part number EM488M1644LBA
Manufacturer Eorex
File Size 249.55 KB
Description 128Mb Synchronous DRAM
Datasheet download datasheet EM488M1644LBA Datasheet
Additional preview pages of the EM488M1644LBA datasheet.
Other Datasheets by Eorex

Full PDF Text Transcription

Click to expand full text
eorex EM488M1644LBA 128Mb (2M×4Bank×16) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • VDD/VDDQ= 1.8V +/- 0.1V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page • Programmable CAS Latency (C/L) – 1,2,3 • Data Mask (DQM) for Read / Write Masking • Programmable Wrap Sequence – Sequential (B/L = 1/2/4/8/full Page) – Interleave (B/L = 1/2/4/8) • Burst Read with Single-bit Write Operation • All Inputs are Sampled at the Rising Edge of the System Clock • Auto Refresh and Self Refresh • Auto Temperature Compensated Self Refresh • Partial Array Self Refresh • Power Down Mode • Deep Power Down Mode • Programmable output buffer driver strength • 4,096 Refresh Cycles / 64ms (15.
Published: |