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PTB20080 - 25 Watts/ 1.6-1.7 GHz RF Power Transistor

Datasheet Summary

Description

ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz.

It is rated at 25 Watts minimum output power for PEP applications.

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Datasheet Details

Part number PTB20080
Manufacturer Ericsson
File Size 445.22 KB
Description 25 Watts/ 1.6-1.7 GHz RF Power Transistor
Datasheet download datasheet PTB20080 Datasheet
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Full PDF Text Transcription

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e PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 25 Watts, 1.6–1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power & Efficiency vs. Input Power 40 80 30 60 Output Power (Watts) 20 40 VCC = 26 V 10 ICQ = 125 mA f = 1.65 GHz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.
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