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PTB20082 - 15 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Datasheet Summary

Description

The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz.

Rated at 15 watts output power, it may be used for both CW and PEP applications.

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Datasheet Details

Part number PTB20082
Manufacturer Ericsson
File Size 168.02 KB
Description 15 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
Datasheet download datasheet PTB20082 Datasheet
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Full PDF Text Transcription

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e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.5 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 20 Output Power (Watts) 16 12 8 4 0 0 1 2 3 4 200 82 LOT COD E VCC = 26 V ICQ = 70 mA f = 2.
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