• Part: PTB20141
  • Manufacturer: Ericsson
  • Size: 41.71 KB
Download PTB20141 Datasheet PDF
PTB20141 page 2
Page 2

PTB20141 Description

The 20141 is a class AB, NPN, mon emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.