• Part: PTB20146
  • Manufacturer: Ericsson
  • Size: 39.29 KB
Download PTB20146 Datasheet PDF
PTB20146 page 2
Page 2

PTB20146 Description

The 20146 is a class A, NPN, mon emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.