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PTB20166 - 23 Watts/ 675-925 MHz Common Base RF Power Transistor

Datasheet Summary

Description

The 20166 is an NPN, common base RF power transistor intended for 24

30 Vdc class C operation from 675 to 925 MHz.

Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications.

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Datasheet Details

Part number PTB20166
Manufacturer Ericsson
File Size 46.10 KB
Description 23 Watts/ 675-925 MHz Common Base RF Power Transistor
Datasheet download datasheet PTB20166 Datasheet
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Full PDF Text Transcription

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e PTB 20166 23 Watts, 675–925 MHz Common Base RF Power Transistor Description The 20166 is an NPN, common base RF power transistor intended for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • Specified at 28 Volt, 925 MHz Class C Characteristics 55% Min Collector Efficiency at 23 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.
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