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PTB20167 - 60 Watts/ 850-960 MHz RF Power Transistor

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Description

The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz.

Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications.

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Datasheet Details

Part number PTB20167
Manufacturer Ericsson
File Size 47.22 KB
Description 60 Watts/ 850-960 MHz RF Power Transistor
Datasheet download datasheet PTB20167 Datasheet
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e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 24 Volt, 905 MHz Common Base Characteristics - Output Power = 60 W - Power Gain = 7.0 dB Min - Efficiency = 60% Min Double Input/Output Matched for Wideband Performance Gold Metallization Silicon Nitride Passivated • • • Typical Output Power vs.
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