| Part number | PTF10112 |
|---|---|
| Datasheet | PTF10112_Ericsson.pdf |
| File Size | 324.91 KB |
| Manufacturer | Ericsson |
| Description | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
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The PTF 10112 is an internally matched mon source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
| Part Number | Description |
|---|---|
| PTF10111 | 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10120 | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10122 | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
