Datasheet Details
| Part number | PTF10119 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 141.55 KB |
| Description | 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| Datasheet |
 PTF10119 Datasheet
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| Part number | PTF10119 |
|---|---|
| Manufacturer | Ericsson |
| File Size | 141.55 KB |
| Description | 12 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| Datasheet |
PTF10119 Datasheet
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The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz.
It is rated at 12 watts power output.
Nitride surface passivation and gold metallization ensure excellent device reliability.
PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor.
| Part Number | Description |
|---|---|
| PTF10111 | 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10120 | 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10122 | 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor |