1SS400 Datasheet | Eris Technology

FEATURES ‧Small surface mounting type ‧High Speed ‧High reliability with high surge current handing capability MARKING : A High Speed Switching Diode MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter VRM VR IFM IO Isurge TJ Tstg Peak Reverse Voltage DC Reverse Voltage Peak Forward Current Mean Rectifying Current Surge Current (1s) Junction Temperature Storage Temperature Value 90 80 225 100 500 150 -55~150 Unit V V m A m A m A o C o C ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Forward Voltage Reverse Current Capacitance between Terminals Reverse Recovery Time VF IF= 100 m A IR VR= 80 V CT VR= 0.5 V, f= 1 MHZ trr VR=6V, IF=10m A, RL=100 Min Typ Max Units - - 1.2 V - - 0.1 µA - - 3 PF - - 4 ns Revision: B01 .eris..tw High Speed Switching Diode Revision:...