P5MNG4P4 - 65V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

‧RDS(ON)≦4.4mΩ@VGS=10V ‧Fast switching ‧Improved dv/dt capability ‧Green Device Available PPAK5X6 Pin Configuration D DDDD G S S SG S.

Eris

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Datasheet Details

Part number	P5MNG4P4
Manufacturer	Eris
File Size	910.43 KB
Description	65V N-Channel MOSFET
Datasheet	P5MNG4P4 Datasheet
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P5MNG4P4 65V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 65 V RDS(ON) 4.4 mΩ ID 95 A Features ‧RDS(ON)≦4.

Published: Aug 22, 2025 |