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TPMNG30H - 60V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • ‧RDS(ON)≦3Ω@VGS=10V ‧Improved dv/dt capability ‧Fast switching ‧Green Device Available SOT-323 Pin Configuration D G S D G S.

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Datasheet Details

Part number TPMNG30H
Manufacturer Eris
File Size 1.10 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet TPMNG30H Datasheet

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Full PDF Text Transcription

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TPMNG30H General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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