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TPMNG30HA - 60V N-Channel MOSFET

Features

  • ‧RDS(ON)≦3Ω@VGS=10V ‧Improved dv/dt capability ‧Fast switching ‧Green Device Available 60V N-Channel MOSFETs BVDSS 60 V RDS(ON) 3Ω ID 300 mA.

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Datasheet Details

Part number TPMNG30HA
Manufacturer Eris
File Size 533.69 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet TPMNG30HA Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPMNG30HA D D G G S S SOT-323 Features ‧RDS(ON)≦3Ω@VGS=10V ‧Improved dv/dt capability ‧Fast switching ‧Green Device Available 60V N-Channel MOSFETs BVDSS 60 V RDS(ON) 3Ω ID 300 mA Applications ‧Notebook ‧Load Switch ‧Battery Protection ‧Hand-Held Instruments Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current - Continuous IDM Drain Current - Pulsed (NOTE 1) PD Power Dissipation TJ Operating Junction Temperature Range TSTG Storage Temperature Range Thermal Characteristics Symbol Parameter RθJA Thermal Resistance Junction to Ambient Revision: B01 DC-01561 1/5 Rating 60 ±20 300 1.2 300 -55 to 150 -55 to 150 Units V V mA A mW oC oC Typ. 417 Max. - Unit oC/W www.
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