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EM562081 - 256K x 8 Low Power SRAM

Key Features

  • Single power supply voltage of 2.7V to 3.6V.
  • Power down features using CE1# and CE2.
  • Low operating current : 25mA(max. for 70 ns).
  • Maximum Standby current : 10µA at 3.6 V.
  • Data retention supply voltage: 1.5V to 3.6V.
  • Direct TTL compatibility for all input and output.
  • Wide operating temperature range: -40°C to 85°C.
  • Package type: 36-ball TFBGA, 6x8mm EM562081 256K x 8 Low Power SRAM Preliminary, Rev 1.0 7/2001 asserted low.

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Full PDF Text Transcription for EM562081 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for EM562081. For precise diagrams, and layout, please refer to the original PDF.

EtronTech Features • Single power supply voltage of 2.7V to 3.6V • Power down features using CE1# and CE2 • Low operating current : 25mA(max. for 70 ns) • Maximum Standby...

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d CE2 • Low operating current : 25mA(max. for 70 ns) • Maximum Standby current : 10µA at 3.6 V • Data retention supply voltage: 1.5V to 3.6V • Direct TTL compatibility for all input and output • Wide operating temperature range: -40°C to 85°C • Package type: 36-ball TFBGA, 6x8mm EM562081 256K x 8 Low Power SRAM Preliminary, Rev 1.0 7/2001 asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#) provides lower and upper byte access.

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