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EM584161 - 256K x 16 Low Power SRAM

Description

Symbol A0 - A17 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC Function Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection Overview The EM584161 is a 4,194,304-bit SRAM organized as 262,144

Features

  • Single power supply voltage of 1.65V to 1.95V.
  • Power down features using CE1# and CE2.
  • Low power dissipation.
  • Data retention supply voltage: 0.9V to 1.95V.
  • Direct TTL compatibility for all input and output.
  • Wide operating temperature range: -40°C to 85°C.
  • Standby current @ VDD = 1.95 V ISB Maximum EM584161BA/BC-70/85 EM584161BA-70E/85E 8 µA 80 µA D GND DQ11 A17 A7 EM584161 256K x 16 Low Power SRAM Rev 2.0 Pin Configuration 48-Ball.

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Datasheet preview – EM584161

Datasheet Details

Part number EM584161
Manufacturer Etron Technology
File Size 252.32 KB
Description 256K x 16 Low Power SRAM
Datasheet download datasheet EM584161 Datasheet
Additional preview pages of the EM584161 datasheet.

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Full PDF Text Transcription

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EtronTech Features • Single power supply voltage of 1.65V to 1.95V • Power down features using CE1# and CE2 • Low power dissipation • Data retention supply voltage: 0.9V to 1.95V • Direct TTL compatibility for all input and output • Wide operating temperature range: -40°C to 85°C • Standby current @ VDD = 1.95 V ISB Maximum EM584161BA/BC-70/85 EM584161BA-70E/85E 8 µA 80 µA D GND DQ11 A17 A7 EM584161 256K x 16 Low Power SRAM Rev 2.
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