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EM639165TS - 8M x 16 bit Synchronous DRAM

Description

Table 3.

Clock: CLK is driven by the system clock.

All SDRAM input signals are sampled on the positive edge of CLK.

Features

  • Fast access time from clock: 5/5.4 ns.
  • Fast clock rate: 166/143 MHz.
  • Fully synchronous operation.
  • Internal pipelined architecture.
  • 2M word x 16-bit x 4-bank.
  • Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function.
  • Auto Refresh and Self Refresh.
  • 4096 refresh cycles/64ms.
  • CKE power down mode.
  • Single +3.3V ± 0.

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Datasheet Details

Part number EM639165TS
Manufacturer Etron Technology
File Size 429.45 KB
Description 8M x 16 bit Synchronous DRAM
Datasheet download datasheet EM639165TS Datasheet
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Full PDF Text Transcription

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EtronTech EM639165TS Etron Confidential 8M x 16 bit Synchronous DRAM (SDRAM) Advanced (Rev 1.0, Mar. /2009) Features • Fast access time from clock: 5/5.4 ns • Fast clock rate: 166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 2M word x 16-bit x 4-bank • Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • Single +3.3V ± 0.3V power supply • Interface: LVTTL • 54-pin 400 mil plastic TSOP II package - Pb free and Halogen free Overview The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits.
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