FLL21E090IY Description
The FLL21E090IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease...
FLL21E090IY Key Features
- High Voltage Operation (VDS=28V) GaAs FET -High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) -Broad Frequency Range : 2110 to