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FLL21E135IX - High Power GaAs FET

General Description

The FLL21E135IX is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers.

This device is target for high voltage, low current operation in digitally modulated base station amplifiers.

Key Features

  • High Voltage Operation (VDS=28V) GaAs FET High Gain: 15.5dB(typ. ) at Pout=44.8dBm(Avg. ) Broad Frequency Range : 2110 to 2170MHz High Reliability.

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Datasheet Details

Part number FLL21E135IX
Manufacturer Eudyna Devices
File Size 359.50 KB
Description High Power GaAs FET
Datasheet download datasheet FLL21E135IX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLL21E135IX L,S-band High Power GaAs FET FEATURES High Voltage Operation (VDS=28V) GaAs FET High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) Broad Frequency Range : 2110 to 2170MHz High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.