FLL21E135IX Description
The FLL21E135IX is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of...
FLL21E135IX Key Features
- High Voltage Operation (VDS=28V) GaAs FET -High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) -Broad Frequency Range : 2110 t