FLM5359-8F Datasheet | Eudyna Devices

FEATURES - High Output Power: P1d B = 39.5d Bm (Typ.) - High Gain: G1d B = 9.5d B (Typ.) - High PAE: ηadd = 36% (Typ.) - Low IM3 = -46d Bc@Po = 28.5d Bm - Broad Band: 5.3 ~ 5.9GHz - Impedance Matched Zin/Zout = 50Ω C-Band Internally Matched FET DESCRIPTION The FLM5359-8F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage Gate-Source Voltage -5 Total Power Dissipation Tc = 25°C Storage Temperature Tstg Channel Temperature Tch -65 to +175 °C °C Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 m A respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol...