FLM5359-8F Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B = 39.5d Bm (Typ.) - High Gain: G1d B = 9.5d B (Typ.) - High PAE: hadd = 36% (Typ.) - Low IM3 = -46d Bc@Po = 28.5d Bm - Broad Band: 5.3 to 5.9GHz - Impedance Matched Zin/Zout = 50ohm DESCRIPTION The FLM5359-8F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.C Storage Temperature Tstg Channel Temperature Tch SEDI remends the follow ing conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (V DS ) should not exceed 10 volts. 2. The forw ard and reverse gate currents should not exceed 32.0 and -4.4 m A respectively w ith gate resistance of 100ohm. Rating 15 -5 42.8 -65 to +175 175 Unit V V W deg.C deg.C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25deg.C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE ESD Note : Based on EIAJ ED-4701 C-111A (C=100p F, R=1.5kohm) Symbol IDSS gm Vp VGSO P1d B G1d B Idsr hadd DG IM3 Rth DTch Test Conditions VDS=5V, V GS=0V VDS=5V, IDS=2200m A VDS=5V, IDS=180m A IGS=-180u A VDS=10V, IDS=0.55 IDSS (Typ.), f=5.3 to 5.9 GHz, ZS=ZL=50ohm f = 5.9 GHz, Df = 10 MHz 2-Tone Test Pout = 28.5d Bm S.C.L. Channel to Case 10V x Idsr x Rth IB Class 3A Yes Min. -1.0 -5.0 38.5 8.5 -44 - Limit Typ. 3900 2000 -2.0 39.5 9.5 2200 36 -46 3.0 - Max. 5850 -3.5 2600 +/-0.6 3.5 80 Unit m A m S V V d Bm d B m A % d B d Bc deg.C/W deg.C G.C.P.: Gain pression Point, S.C.L.: Single Carrier Level 4000V to 8000V Ro HS...